HKUST – TechConnect Briefs

Developing a Common Compact Modeling Platform for Model Developers and Users

With the recent advance of CMOS technology to the 32nm range, there is a major concern to continue the scaling roadmap. Many new devices have been proposed, but selecting the right structure is not a [...]

i-MOS: A Platform for Compact Modeling Sharing

Wang H., Chan M., HKUST, HK

The interactive Modeling and Online Simulation (i-MOS) platform is designed as a service for model developers to disseminate their models. With a simple user interface, users can perform model evaluation and circuit simulation over a [...]

A Phase-Change Random Access Memory Model for Circuit Simulation

Chan M., HKUST, HK

A temperature tracking approach has been developed to model the property of phase-change memory (PCM) behavior under input pulses with arbitrary magnitude and shapes. By utilizing the Johnson-Mehl-Avrami equation to monitor the crystal fraction in [...]

Impacts of Three nC60 Dispersal Methods on E. coli Growth

Dai J., Chen G.H., HKUST, CN

The preparations of nC60 through water directly and toluene or THF indirectly represent all possible dispersal routes of fullerene particles in aquatic ennvironemnts. These different dispersal routes may result in different toxicity on microorganisms such [...]

Modeling the Geometry-Dependent Parasitics in Multi-Fin FinFETs

Chan M., Wu W., HKUST, HK

The geometry-dependent parasitic components in multi-fin FinFETs are studied. The gate-resistance has a stronger dependent on the device geometry compared with the planar MOSFETs. Parasitic fringing capacitance and overlap capacitance become highly coupled to the [...]