Chartered Semiconductor Manufacturing Ltd.

Compact Model for Manufacturing Design and Fluctuation Study

Lim K.Y., Zhou X., Chartered Semiconductor Manufacturing Ltd., SG

In this article, a physics based compact model [1, 2] has been used as a tool for manufacturing process variability study. Three critical end-of-line (EOL) measured electrical testing (ET) parameters, namely Vth, Ion and Ioff, [...]

A Scalable RF Model of the Metal-Oxide-Metal (MOM) Capacitor

Chunqi G., Manh Anh D., Zheng Z., Boyland F., Chartered Semiconductor Manufacturing Ltd., SG

An accurate, scalable RF subcircuit model is presented for Metal-Oxide-Metal (MOM) capacitor. Polynomial equations are used to describe the relation between the value of each subcircuit component and the area of MOM capacitor. The model [...]

Simulation of Narrow-Width Effects in Sub-Half-Micron n-MOSFETs with LOCOS Isolation

Loiko K.V., Peidous I.V., Ho H-M, Lim D.H., Chartered Semiconductor Manufacturing Ltd., SG

The anomalous threshold voltage behavior of sub-halfmicron LOCOS-isolated n-MOSFETs is explained by the segregation of boron and narrow-mask effect of local oxidation. A novel approach to simulating narrow-width effects is proposed. It combines 2-D process [...]

Methodology for Calibrating Process and Device Simulators by Extracting Model Parameters from Electrical Data

Ho H-M, Zu Y., Loiko K.V., Lim D.H.Y., Chartered Semiconductor Manufacturing Ltd., SG

This paper describes a physically based methodology for calibrating 2D semiconductor process and device simulators. The calibration begins with the determination of 1D and 2D doping profiles by means of extracting model parameters from electrical [...]