US – Page 429 – TechConnect Briefs

Phase Field Modeling of Dislocation Network Coarsening, Dislocation – Impurity, and Dislocation – Precipitate Interactions

Shen C., Kazaryan A., Anderson P.M., Wang Y., Ohio State University, US

Interactions of dislocations with one another and their interactions with impurities and precipitates determine the behavior of plastic deformation of crystalline materials. In this presentation, we will discuss recent advances in phase field modeling of [...]

Structural and Electronic Properties of Quantum Dot Surfaces

Galli G., Puzder A., Willilamson A.J., Grossman J.C., Pizzagalli L., Lawrence Livermore National Laboratory, US

We report on recent progress in studying the structural, electronic and optical properties of Si and Ge quantum dots, using first principles calculations. We used both ab initio molecular dynamics techniques and quantum Monte Carlo [...]

Diffusion Mechanisms and Capture Radii in Silicon

Beardmore K., Windl W., Haley B.P., Gronbech-Jensen N., Motorola, US

We have calculated the capture radii for several defect pairs, consisting of dopants and point defects (interstitials I and vacancies V, in silicon. Interaction potentials for I-V, I-B, P-V, and As-V were calculated using the [...]

Introducing Monte Carlo Diffusion Simulation into TCAD tools

Strecker N., Moroz V., Jaraiz M., Avant!, US

Advantages and disadvantages of the alternative approaches to the dopant diffusion simulation are discussed. Complementary use of the Monte Carlo and continuum diffusion models is suggested. Application of the integrated commercially available process simulation tools [...]

Nanoworld Semiconductor Industry – State and Future Challenges of Technology Computer Aided Design

Puchner H., Cypress Semiconductor, US

Several application examples of nanoscale techniques used to influence or enhance the understanding of material properties as well as processing behavior are presented. We will also present a review of first principle density functional theory [...]

Spatially Resolved Electron Energy-Loss Spectroscopy, a Tool to Verify Electronic Structure Calculations in Nanostructured Materials

Duscher G., Plitzko J., Kisielowski C., Buzko R., Pennycook S.J., Pantelides S.T., North Carolina State University, US

Modern mcroscopy allows a direct comparison between experimental results and the atomic and electronic structure as obtained by state of the art ab-initio calculations. The phase reconstruction technique allows one to determine the positions of [...]

Country: US

Phase Field Modeling of Dislocation Network Coarsening, Dislocation – Impurity, and Dislocation – Precipitate Interactions

Structural and Electronic Properties of Quantum Dot Surfaces

Diffusion Mechanisms and Capture Radii in Silicon

Introducing Monte Carlo Diffusion Simulation into TCAD tools

Nanoworld Semiconductor Industry – State and Future Challenges of Technology Computer Aided Design

Spatially Resolved Electron Energy-Loss Spectroscopy, a Tool to Verify Electronic Structure Calculations in Nanostructured Materials

Gain in a Semiconductor Waveguide Qubit

Residual Stress Modeling in Quantum Dots

Quantum Effects in SOI Devices

Electron Vorticity – Internal Energy Formulation of the Hydrodynamic Model of Electron Transport