US – Page 428 – TechConnect Briefs

Molecular Control of the Drain Current in a Buried Channel MOSFET

Yang J., de la Garza L., Thornton T.J., Kozicki M., Gust D., Arizona State University, US

We present results from a buried channel MOSFET with a molecular monolayer deposited on the surface. After attachment of the monolayer, the threshold voltage of the device shifts by approximately – 4.5 V. We explain [...]

Effects of Structural Deformation and Tube Chirality on Electronic Conductance of Carbon Nanotubes

Svizhenko A., Maiti A., Anantram M.P., NASA Ames Research Center, US

A combination of large scale classical force-field (UFF), density functional theory (DFT) and tight-binding Green’s function transport calculations is used to study the electronic properties of carbon nanotubes under the twist, bending and AFM-tip deformation. [...]

Effects of Disorder in Reduced Dimensional and Quantum Electronics

Weaver B.D., Aifer E.H., Naval Research Laboratory, US

We discuss the effect of atomic disorder on electronic systems that operate in either reduced dimension or by quantum-mechanical transport. Systems include high electron mobility transistors, tunnel diodes, superconductors, multiquantum well infrared and ultraviolet detectors, [...]

Molecular Electronics: The Experimentalist’s View

Tsui R., Motorola, US

In the last few years, significant experimental advances have been achieved in the utilization of nanoscale molecular components for electronic applications. A variety of materials, including carbon nanotubes, custom-synthesized organic molecules, metallic nanoparticles, and biological [...]

Nanocrystalline Silicon Superlattices for Nanoelectronic Devices

Tsybeskov L., University of Rochester, US

This paper provides a brief introduction to a novel nanostructured system consisting of ordered layers of Si nanocrystals separated by atomically flat and chemically abrupt layers of amorphous silicon dioxide with thickness of several nanometers. [...]

Molecular Conductors: Paradigms and Possibilities

Ghosh A.W., Paulsson M., Datta S., Purdue University, US

The purpose of this talk is to present simple models (whose parameters are extracted from first-principles theory) that capture the basic physics of molecular conduction and provide intuitive explanations for a number of features in [...]

Quantum Transport in Nanotube Transistors

Leonard F., Sandia National Laboratories, US

We discuss recent calculations of electronic transport in a 10 nm long, three-terminal carbon nanotube device. By calculating self-consistently the electrostatic potential and charge in the device, we obtain the band bending along the nanotube [...]

Molecular Electronics by the Numbers

Pantelides S.T., Di Ventra M., Lang N.D., Rashkeev S.N., Vanderbilt University, US

The paper gives an overview of recent work by the authors in first-principles, parameter-free calculations of electronic transport in molecules in the context of experimental measurements of current-voltage (I-V) characteristics of several molecules by Reed [...]

Dislocation Processes and Deformation Twinning in Nanocrystalline Al

Yamakov V., Wolf D., Phillpot S.R., Gleiter H., Argonne National Lab, US

Using a recently developed, massively parallel molecular-dynamics (MD) code for the simulation of polycrystal plasticity, we analyze for the case of nanocrystalline Al the complex interplay among various dislocation and grain-boundary processes during low-temperature deformation. [...]

Nanomanipulation and Characterization of Individual Carbon Nanotubes

Ruoff R., Northwestern University, US

A new tool that operates in a scanning electron microscope for measuring the mechanics of nanostructures is briefly presented, and its use to measure the response to tensile loading of carbon nanotubes is outlined.