US – Page 427 – TechConnect Briefs

Femtosecond Energy Concentration in Nanosystems Coherently Controlled by Excitation Phase Modulation

Stockman M.I., Faleev S.V., Bergman D.J., Georgia State University, US

We predict and quantitatively evaluate the unique possibility of concentrating the energy of an ultrafast excitation of a nanosystem in a small part of the whole system by means of coherent control (phase modulation of [...]

The Numerical Simulation of a Substractive Process for the Fabrication of 3-D Low Temperature Co-Fired Ceramics Packaging Structures and Devices: Jet Vapor Etching

Ramos I., García L., Furlan R., Santiago-Aviles J.J., Pereira M.T., University of Puerto Rico at Humacao, US

We applied numerical simulation in order to gain knowledge and insight into the physical processes associated with Jet Vapor Etching, a subtractive process used in the machining of Low Temperature Co-Fired Ceramic (LTCC) tapes. Also, [...]

Process and Device Calibration for 31/51nm NMOS/PMOS Devices fabricated by Direct Write E-Beam

Puchner H., Eib N., Kimball J., Mirabedini M., Haywood J., Aronowitz S., Cypress Semiconductor, US

In order to ensure predictability of process and device calibration tools, we manufactured CMOS devices with smallest end-of-line gate electrode dimensions of 31nm and 51nm by applying direct write e-beam lithography. A special test-chip was [...]

A Physically-Based Model for Oxidation in a Circular Trench in Silicon

Xu Y., Sudhama C., Hong S., Sellers J.A., Ambadi S., Kamekona K., Averett G., Ruiz B., Wan I., Cai W., Wu Y., Costa J.C., Davies R.B., ON Semiconductor, US

Oxidation in a circular trench is of relevance in several applications, including trench capacitors in memories. In this work a model for stress-dependent oxidation is presented. The model is based on modifications of the Deal-Grove [...]

Numerical Simulation of Superconformal Electrodeposition Using the Level Set Method

Wheeler D., Josell D., Moffat T.P., NIST, US

Damascene copper is rapidly replacing aluminum as the interconnect material of choice in silicon technology. The change is driven by the lower electrical resistivity of copper, which decreases power consumption and permits increased central processor [...]

The Level-Set Method for Modeling Epitaxial Growth

Ratsch C., Petersen M., Caflisch R.E., University of California, Los Angeles, US

A level-set model for the simulation of epitaxial growth is described. In this model, the motion of island boundaries of discrete atomic layers is determined by the time evolution of a continuous level-set funciton psi. [...]

Molecular-Dynamics Study of Physical Properties in Sintered Nano-Particles

Kadau D., Kadau K., Lomdahl P.S., Entel P., Kadau D., Kadau K., Kreth M., Germann T.C., Holian B.L., Westerhoff F., Wolf D.E., Los Alamos National Laboratory, US

Nano-crystalline metals, in which the size of grains is in the nanometer range, exhibit physical properties different from ordinary polycrystalline materials, thus these materials are of technological interest [1]. One example is the increasing hardness [...]

The Electroreduction of Hydrogen on Pt(111)

Marzari N., Blum L., Car R., University of Puerto Rico, US

The electroreduction of hydrogen on Pt(111) in acidic media is the primary fuel cell reaction. The explicit mechanism for this process involves a first order phase transition, which is due to the rotation of the [...]

An Effective Model for Microscopic Intrinsic Localized Modes

Kalosakas G., Bishop A.R., Los Alamos National Laboratory, US

We present a system of coupled degrees of freedom that can effectively describe the localization of intra-molecular excitations in the charge transfer solid PtCl. These excitations correspond to the Raman active motion of chlorines (symmetric [...]

First-principles Study of Electron Transport through Atomistic Metal-Oxide-Semiconductor Structures

Zhang X., Fonseca L.R.C., Demkov A.A., Motorola, Inc., US

We describe a theoretical scheme to combine first-principles molecular dynamics simulation and non-perturbative scattering theory for transport calculations. We compare our approach with published results for electron transport through a single Al atom. The method [...]