US – Page 410 – TechConnect Briefs

A Scheme for Electrical Detection of Single Electron Spin Resonance

Martin I., Mozyrsky D., Jiang H.W., Los Alamos National Laboratory, US

We study a scheme for electrical detection of the spin resonance (ESR) of a single electron trapped near a Field Effect Transistor (FET) conduction channel. In this scheme, the resonant Rabi oscillations of the trapped [...]

Characterization of Core/Shell Nanoparticles by X-Ray Absorption Spectroscopy

Calvin S., Carpenter E.E., Stroud R.M., Harris V.G., Naval Research Laboratory, US

X-ray absorption spectra of nanoparticles with iron cores and oxide shells, synthesized using the reverse micellar method, were collected at the National Synchrotron Light Source. Comparison of the x-ray absorption near edge structure (XANES) to [...]

Noise Spectroscopy of a Single Spin with Spin Polarized STM

Nussinov Z., Crommie M., Balatsky A.V., Los Alamos National Laboratory, US

We propose a mechanism for detection of a single spin center on a non-magnetic substrate. In the detection scheme, the STM tunnel current is correlated with the spin orientation. In the presence of magnetic field, [...]

Structural and Morphological Transformations in Self-Assembled Sn Quantum Dots in Si Matrix

Moeck P., Lei Y., Topuria T., Browning N.D., Ragan R., Min K.S., Atwater H.A., Portland State University, US

Transmission electron microcopy (TEM) in both the parallel illumination and scanning probe mode (i.e. STEM) has revealed morphological and structural transformations in self-assembled II-VI, III-V and group IV semiconductor quantum dots (QDs). These transformations result [...]

Controlled Synthesis and Directed Assembly of Vertically Aligned Carbon Nanofibers for Functional Nanoscale Devices

Merkulov V.I., Melechko A.V, Guillorn M.A., McKnight T.E., Austin D.W., Hale M., Zhang L., Yang X., Hensley D.K., Subich T., Doktycz M.J., Lowndes D.H., Simpson M.L., Oak Ridge National Laboratory, US

The controlled synthesis and directed assembly of materials at the nanoscale remain two of the most difficult challenges for the realization of functional nanoscale devices. For example, while there has been a great deal of [...]

Oriented Molecular Sieve Films by Heteroepitaxial Growth

Jeong H-K, Krohn J., Sujaoti K., Tsapatsis M., Univ. of Massachussetts at Amherst, US

Potential uses of crystalline molecular sieves as selective membranes, membrane reactors, chemical sensors, optical devices as well as in other new applications rely on the ability to grow them as films.1-12 The crystallinity of these [...]

Fabrication of 20 nm Embedded Longitudinal Nanochannels Transferred from Metal Nanowire Patterns

Choi D.S., Yang E.H., Jet Propulsion Laboratory, US

The traditional electron beam lithography and more recently developed focused ion beam (FIB) milling/lithography techniques have been exploited for generating exposed nanometer-size nanochannels. An additional process step of sealing exposed nanochannels cant be avoided to [...]

Near-Field Nanomodification of Thin Films Using Femtosecond Laser and Atomic Force Microscope

Chimmalgi A., Choi T.Y., Grigoropoulos C.P., Wan D., Komvopoulos K., University of California-Berkeley, US

Nanostructures, which have characteristic dimensions that are difficult to achieve by conventional optical lithography techniques, are finding ever-increasing applications in a variety of fields. For applications incorporating nanodevices to gain widespread acceptance, high resolution, reliability [...]

Step and Flash Imprint Lithography Using UV-transparent, Electrically Conductive Templates

Hooper A., Talin A.A., Dauksher W.J., Baker J.H., Convey D., Eschriech T., Resnick D.J., Bailey T.C., Johnson S., Willson C.G., Motorola Labs, US

Step and flash imprint lithography (SFIL) is a promising new technique capable of resolving sub 100nm features at a substantially lower cost than any other candidate method currently under development. Successful implementation of SFIL requires [...]

Modeling and Simulation for Epitaxial Growth with Strain

Caflisch R.E., Connell C., Luo E., Gyure M., Simms G., Vvedensky D., UCLA, US

We describe a new approach to simulation of epitaxial growth with strain. An island dynamics model with a level set numerical method is used for the growth, a lattice statics model is used for the [...]