US – Page 362 – TechConnect Briefs

A Distributed Compact Model for High-Density, On-Chip Trench Capacitors in High-Frequency Applications

Shastri S., Wu Y., Cai W.Z., Grivna G., ON Semiconductor, US

In this paper we describe for the first time a distributed model for the trench capacitor, which includes process parameters that may be extracted from the low-frequency measurement of one or two capacitor geometries. The [...]

Monte Carlo Simulation of Transport in Two-Dimensional Electron Gas via Energy Relaxation

Zhao X., Nabet B., Drexel University, US

We simulate the process of energy relaxation in two-dimensional-electron-gas (2DEG) via electron-electron (e-e) scattering by Monte Carlo method. Results indicate a sub-picosecond energy relaxation response time to external perturbation. We suggest that carriers are subjected [...]

Monte Carlo Transport Calculations of Strained SiGe Heterostructures from Ab-Initio Band-structures

Zorman B., Krishnan S., Vasileska D., Xu J., Van Schilfgaarde M., Arizona State University, US

The continued scaling of semiconductor devices creates numerous challenges which have to be overcome in order to achieve device behavior that satisfies speed and power constraints. Possible alternatives to conventional CMOS devices include strained-Si or [...]

Hole Transport Simulations in p-channel Si MOSFETs

Krishnan S., Vasileska D., Fischetti M.V., Arizona State University, US

We use a Monte Carlo method to investigate hole transport in ultrasmall p-channel MOSFETs with gate lengths of 25 nm. To model band-structure effects like warping, anisotropy and non-parabolicity on carrier transport, our device simulator [...]

SOS Gate Capacitance Modeling

Morris H.C., Cumberbatch E.C., Abebe H., San Jose State University, US

A gate capacitance model for the SOS structure has been developed. The spatial dependence of the potential defines the changes in the charge density as well as the boundary conditions between the layers. The SOS [...]

MOSFET Analytical Inversion Charge Model with Quantum Effects using a Triangular Potential Well Approximation

Abebe H., Cumberbatch E.C., Tyree V., Morris H.C., USC/ISI MOSIS, US

The eigenfunctions from solutions of the Schrödinger equation for a triangular potential well are the Airy functions. The triangular potential approximation has been shown to be a good approximation for the charge density when the [...]

Analytical Surface Potential Model with Polysilicon Gate Depletion Effect for NMOS

Cumberbatch E., Abebe H., Morris H., Tyree V., USC/ISI MOSIS, US

Different modeling approaches for the sub-100nm MOSFET are discussed in [1] and the surface potential description model is reported to be promising, [1, 2]. Surface potential changes impact gate capacitance and current-voltage (I-V) characteristics of [...]

Examination of the Effects of Unintentional Doping on the Operation of FinFETs with Monte Carlo Simulation Integrated with Fast Multipole Method (FMM)

Khan H., Ahmed S.S., Vasileska D., Arizona State University, US

Novel device structures such as dual gate SOI, Ultra thin body SOI, FinFETs, etc. have emerged as a solution to the ultimate scaling limits of conventional bulk MOSFETs. In this paper, we use a semi-classical [...]

Spin Polarization in GaAs/Al0.24Ga0.76As Heterostructures

Ashok A., Akis R., Vasileska D., Ferry D.K., Arizona State University, US

Spintronics is a new branch of electronics which involves the active control and manipulation of spin degrees of freedom in solid-state devices. Spin transport differs from charge transport as spin is a non-conserved quantity in [...]

Multi-Scale Computational Framework: Theoretical approach and application for the growth of carbon nanotubes

Vasenkov A.V., Fedoseyev A.I., Kolobov V.I., Hong Ki-Ha, Choi H.S., Kim J., Kim K.H., Kim J., Kim K.H., Lee H.S., Shin J-K, CFD Research Corporation, US

The current rapid development of nanotechnology has created a significant interest to predict the behavior of materials from the atomic to the engineering scales. However, it was found that such prediction is a very challenging [...]