NO – Page 3 – TechConnect Briefs

Analytical Solutions to Model the Line Edge Roughness and its Effect on Subthreshold Behavior of DG FinFETs

Monga U., Fjeldly T.A., Norwegian University of Science and Technology, and University Graduate Center (UNIK), NO

Statistical variability such as line edge roughness (LER) and random dopant effects have become major concerns in the nanoscale regime. Due to the intrinsic body, multigate devices such as FinFETs don’t suffer from random dopant [...]

Compact Subthreshold Modeling of Rectangular Gate and Trigate MOSFETs

Fjeldly T.A., Monga U., Norwegian University of Technology, NO

We have previously shown that the subthreshold potential distribution of DG and circular gate MOSFETs can be precisely modeled using conformal mapping techniques. Simpler, unified models suitable for circuit design can also be established for [...]

Behaviour of Aerosol Nanoparticles Released into Simulated Workplace Environment

Wu Q., Marion S., Seipenbusch M., Kasper G., DNV, NO

In this work we report results from our EU research project NANOTRANSPORT. This project addressed the occupational health risks associated with aerosols released during manufacture of nanoparticles. The main objective of this project was to [...]

Analytical Modeling of the Subthreshold Electrostatics of Nanoscale GAA Square Gate MOSFETs

Vishvakarma S.K., Fjeldly T.A., Norwegian University of Science and Technology, NO

An analytical model is presented for the 3-D electrostatics of lightly doped GAA square gate MOSFETs operating in the subthreshold domain. The model is based on the assumption of parabolic potential distributions in the directions [...]

Subthreshold Quantum Ballistic Current and Quantum Threshold Voltage Modeling for Nanoscale FinFET

Monga U., Fjeldly T.A., UniK/Norwegian University of Science and Technology, NO

A subthreshold quantum ballistic current model and a quantum threshold voltage model is presented for nanoscale FinFET.The eigenvalues are determined by solving Schrödinger equation along the gate-to-gate axis. The current is then modeled using Natori’s [...]

Compact Quantum Modeling Framework for Nanoscale Double-Gate MOSFET

Monga U., Fjeldly T.A., Norwegian University of Science and Technology, NO

A quantum mechanical modeling framework for ultra-thin body double-gate MOSFETs operating in subthreshold and near-threshold regime is presented. For subthreshold conditions, we have assumed that the electrostatics is dominated by capacitive coupling between the body [...]

Country: NO

Analytical Solutions to Model the Line Edge Roughness and its Effect on Subthreshold Behavior of DG FinFETs

Compact Subthreshold Modeling of Rectangular Gate and Trigate MOSFETs

Behaviour of Aerosol Nanoparticles Released into Simulated Workplace Environment

Analytical Modeling of the Subthreshold Electrostatics of Nanoscale GAA Square Gate MOSFETs

Subthreshold Quantum Ballistic Current and Quantum Threshold Voltage Modeling for Nanoscale FinFET

Compact Quantum Modeling Framework for Nanoscale Double-Gate MOSFET

Physical Properties of Metal Coated Polymer Particles for Anisotropic Conductive Adhesive

Experimental investigation of a new granular filter design for gas cleaning

Capacitance modeling of Short-Channel DG and GAA MOSFETs

Stacked Coupled-Disk MEMS Resonators for RF Applications