JP – Page 2 – TechConnect Briefs

Analysis of Breakdown Characteristics of Field-Plate AlGaN/GaN HEMTs with a High-k Passivation Layer

Kabemura T., Hanawa H., Horio K., Shibaura Institute of Technology, JP

It is well known that the introduction of field plate increases the breakdown voltage of AlGaN/GaN HEMTs. This is because the electric field at the drain edge of the gate is reduced. As another way [...]

Effect of Deep-Acceptor Density in Buffer Layer on Breakdown Voltage of AlGaN/GaN HEMTs with High-k Passivation Layer

Ueda S., Kawada Y., Horio K., Shibaura Institute of Technology, JP

AlGaN/GaN HEMTs are now receiving great interest for application to high-power microwave devices and high power switching devices. To improve the breakdown voltage, the introduction of field plate is shown to be effective, but it [...]

Simulation of Breakdown Characteristics of AlGaN/GaN HEMTs with Double Passivation Layers

Nakano K., Hanawa H., Horio K., Shibaura Institute of Technology, JP

It is well known that the introduction of field plate increases the breakdown voltage of AlGaN/GaN HEMTs. However, it increases the parasitic capacitance, leading to the degradation of high-frequency performance. As another way to improve [...]

A novel fabric softener system to make the softness and water wiping effect compatible.

Igarashi T., Uematsu J., Onda T., Nakamura K., Kao Corporation, JP

It is known that the softness of fabric is realized when fabrics softener is used after washing, and it is also well known that the water-absorbency of the fabrics is decreased as an unfavorable side-effect. [...]

Dispersion technology for CNTs with nano pre-mixer

Takatsuka T., Iida Y., THINKY corporation, JP

Carbon nanotubes (CNTs) and other strongly aggregated materials by van der Waals’ force are known for their excellent material properties with fewer amounts when they are deagglomerated and dispersed. Nano pre-mixer’s, PR-1* (THINKY, Japan), operating [...]

Direct imprinting of liquid silicon

Masuda T., Shimoda T., Japan Advanced Institute of Science and Technology, JP

Silicon is one of the most important materials for electronics. The most widespread process for microfabrication technology of silicon is photolithography including etching process. However, huge capital outlay and large-scale equipment has been recognized as [...]

Simulation of Breakdown Voltage Enhancement in AlGaN/GaN HEMTs with Double Passivation Layers

Horio K., Hanawa H., Shibaura Institute of Technology, JP

It is well known that the introduction of field plate increases the breakdown voltage of AlGaN/GaN HEMTs [1, 2]. However, it increases the parasitic capacitance, leading to the degradation of high-frequency performance. As another way [...]

Effects of Buffer Acceptors on Breakdown Voltages of AlGaN/GaN HEMTs with a High-k Passivation Layer

Kawada Y., Hanawa H., Horio K., Shibaura Institute of Technology, JP

AlGaN/GaN HEMTs are now receiving great interest for application to high-power microwave devices and high-power switching devices. However, the breakdown voltage is known to be greatly lower than that theoretically predicted. To improve the breakdown [...]

Reduction in Lags and Current Collapse in Field-Plate AlGaN/GaN HEMTs with High Acceptor Density in a Buffer Layer

Saito Y., Tsurumaki R., Noda N., Horio K., Shibaura Institute of Technology, JP

We make a two-dimensional transient analysis of field-plate AlGaN/GaN HEMTs with a semi-insulating buffer layer, where a deep acceptor above the midgap is considered. It is studied how the deep-acceptor density and the field plate [...]

Flexible Sheet-type Thermoelectric Generators for Energy Harvesting

Muto T., Kato K., Morita W., Lintec Corporation, JP

Seebeck type thermoelectric (TE) generators are one of the promising devices for the waste heat conversion to the electricity as well as the energy harvesters at a temperature range between room temperature and 200 oC. [...]