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Closed Form Current and Conductance Model for Symmetric Double-Gate MOSFETs using Field-dependent Mobility and Body Doping

Hariharan V., Thakker R., Patil M.B., Vasi J., Rao V.R., IIT Bombay, IN
In this paper we present a completely closed-form inversion charge-based model for the drain current and conductance of a symmetric double-gate MOSFET based on the drift-diffusion transport mechanism, that takes into account vertical field mobility [...]

Neural Computational Approach for FinFET Modeling and Nano-Circuit Simulation

Alam M.S., Kranti A., Armstrong G.A., Z. H. College of Engineering & Technology, IN
FinFETs are very promising for low power, low voltage portable applications. For nano-circuit simulation, a suitable FinFET model is required. A behavioural model based on a neural network has been developed in this work and [...]

Parameter Extraction for Advanced MOSFET Model using Particle Swarm Optimization

Thakker R.A., Patil M.B., Anil K.G., Indian Institute of Technology, IN
In the sub 100-nm regime, MOSFET parameter extraction has become a challenging task. Commonly used gradient based methods have many difficulties such as good initial guess requirement, singularities in objective functions, etc. Genetic Algorithm (GA), [...]

Process Aware Compact Model Parameter Extraction for 45 nm Process

Karmarkar A.P., Dasarapu V.K., Saha A.R., Braun G., Krishnamurthy S., Lin X-W, Synopsys (India) Pvt. Ltd., IN
The current industry trends call for smaller devices and decreasing feature sizes with each technology node. The process variability has a significant impact on the device characteristics for deep sub-micron technologies because of the smaller [...]

An Iterative Approach to Characterize Various Advanced Non-Uniformly Doped Channel Profiles

Kaur R., Chaujar R., Saxena M., Gupta R.S., University of Delhi, IN
Since past three decades, in the pursuit of superior performances relative to high-speed circuits and packing density, miniaturization of device dimensions has been adopted as a powerful tool. Gradually, as device feature sizes move into [...]

Quantitative Analysis of HBV Capsid Protein Geometry Based Upon Computational Nanotechnology

Soundararajan H.C., Sivanandam M., Sri Venkateswara College of Engineering, IN
Computational biology is an interdisciplinary field that applies the techniques of computer science, functional mathematics and statistics to address problems inspired by biology. Numerous studies have shown that structure of proteins contribute towards their functionality [...]

Formal Verification of a MEMS Based Adaptive Cruise Control System

Jairam S., Lata K., Roy S., Bhat N., Texas Instruments India Pvt Ltd., IN
A formal verification approach for MEMS based embedded systems is presented. The methodology is demonstrated on an adaptive cruise control (ACC) system for the motion control of a platoon of cars. The system consists of [...]

Linearity Performance Enhancement of DMG AlGaN/GaN High Electron Mobility Transistor

Kumar S.P., Agrawal A., Chaujar R., Gupta M., Gupta R.S., Gupta M., Gupta R.S., Semiconductor Device Research Laboratory, IN
HEMTs are promising devices for RF wireless communications. For wireless communication applications and RF circuit design, linearity is always one of the most important issues. This is because the devices used in the system may [...]

Pre-Distortion Assessment of Workfunction Engineered Multilayer Dielectric Design of DMG ISE SON MOSFET

Kaur R., Chaujar R., Saxena M., Gupta R.S., Semiconductor Devices Research Laboratory, IN
To overcome miniaturization roadblock, innovative architectural enhancements involving the use of an improved SOI like architecture called Silicon On Nothing (SON) capable of SCE and DIBL suppression onto the existing ISE devices [2], has been [...]

A Novel Dual Gate Strained-Silicon Channel Trench Power MOSFET For Improved Performance

Saxena R.S., Kumar M.J., Indian Institute of Technology, New Delhi, IN
We propose a new dual gate trench power MOSFET with strained Si channel that not only provides lower on resistance than the conventional trench MOSFET but also enables the in-circuit configurability of its characteristics for [...]

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