FinFETs are very promising for low power, low voltage portable applications. For nano-circuit simulation, a suitable FinFET model is required. A behavioural model based on a neural network has been developed in this work and incorporated in a circuit simulator for simulation of FinFET based nano-circuits. The ANN model has been trained to predict -parameters which agree closed with those extracted from precise 3D device simulations. A high frequency demonstrator LNA circuit based on the ANN model has been designed and simulated. Improved dc gain has been observed when design is based on FinFET, as opposed to bulk MOSFET. Performance enhancement can be directly attributed to lower source-drain conductance and lower capacitance in FinFET.
Journal: TechConnect Briefs
Volume: 3, Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation – Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: June 1, 2008
Pages: 853 - 856
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling