In order to diminish the sidewall defects in silicon deep reactive ion etching process, depositing doped silicon dioxide and post-annealing processes are applied. Compared with conventional approaches, the filling-reflow surface shows nearly optical quality. the [...]
CMOS Analog circuits require transistors with low output conductance (gds) in order to achieve high gain. Submicron MOSFETs with halo implants and retrograde wells are designed to have high transconductance (gm) but often suffer from [...]
This paper reports for the first time that the phenomena and reaction mechanism of inverse reactive ion etching (RIE) lag occurs in the silicon deep RIE process without feature coalescence. This phenomenon is related to [...]
, Gundersen, M.A.
, Marcu, L.
, Sun, Y.
, Vernier, P.T.
, University of Southern California, US
Nanosecond pulsed electric fields pass through the external membranes of biological cells (which have typical response times much greater than nanoseconds) and perturb fast-responding intracellular structures and processes. To enable real-time imaging and investigation of [...]
, Kim, H-C
, Lee, W.I.
, Oh, S.I.
, Woo, Y.S.
, School of Mechanical and Aerospace Engineering, Seoul National University., KR
Nano-imprint lithography (NIL) is a processing tech-nique capable of transferring nano-scale patterns onto a thin film of thermoplastics such as polymethyl methacrylate (PMMA). Feature sizes down to 10 nm have been demonstrated to be made [...]
Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 1
Published: March 7, 2004
Industry sector: Sensors, MEMS, Electronics
Topicss: Advanced Manufacturing, Nanoelectronics