In order to diminish the sidewall defects in silicon deep reactive ion etching process, depositing doped silicon dioxide and post-annealing processes are applied. Compared with conventional approaches, the filling-reflow surface shows nearly optical quality. the sidewall roughness of different schemes is compared by cross-section views of scanning electron microscope, shown in the figure 3 and 4 and the ripples are successfully diminished. Atomic force microscopy, AFM, measurement shows 77 and 22 nm in the etched structure and 37 and 8 nm for the PSG-deposited structures, respectively peak-to-valley difference and root mean square. The unique integrated processes expect to implement in the micro devices or replica master with optical surfaces.
Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 1
Published: March 7, 2004
Pages: 473 - 476
Industry sector: Sensors, MEMS, Electronics
Topics: Advanced Manufacturing, Nanoelectronics