Papers:
One-dimensional Phase-Change Nanowires for Information Storage Application
The electrically operated phase-change random access memory (PRAM) features faster write/read, improved endurance, and much simpler fabrication as compared with the traditional transistor-based nonvolatile semiconductor memories. Low-dimensional phase-change materials in nanoscale dimensions offer advantages over [...]
InSb and GaInSb nanowires for thermoelectric applications
One-dimensional III-V compound semiconductor nanowires are an important class of nanomaterials that possess unique structures, remarkable properties, and great potential in various applications. InSb represents the smallest band-gap III-V compound semiconductor (0.17 eV at room [...]
A unique opportunity for industrial scale fabrication of semiconductor nanowire-based devices
A method is developed which enables horizontal growth of semiconductor nanowires on predefined locations. In this architecture, despite most bottom-up approaches, there is no need for post-growth treatments and alignment of nanowires on a given [...]
Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 1
Published: May 20, 2007
Industry sector: Advanced Materials & Manufacturing
Topics: Advanced Materials for Engineering Applications, Nanoparticle Synthesis & Applications
ISBN: 1-4200-6182-8