Micro & Nano Reliability – TechConnect Briefs

Papers:

Modeling of Dynamic Threshold Voltage of High K Gate Stack and Application in FinFET Reliability

He H., He J., Ma C., Wang C., Zhang A., He H., He J., Peking Univeristy, CN

A modeling study of dynamic threshold voltage in high K gate stack is reported in this paper. Both slow transient (STCE) and fast transient charging effect (FTCE) are included in this model. Finally, this model [...]

Functional Performance of Microfluidic On-Board Pumps and Valves with Various Actuation Protocols

Podczeviensky J., McDowell J., Levine L., ALine, Inc., US

Microfluidics are critical to the development of high sensitivity, multiplexed, and quantitative point-of-care diagnostic products that promise to improve the quality of healthcare while lowering costs. Fundamental to a shift from qualitative screening tests to [...]

Shock Testing of Free Standing Silicon-Nitride and Beryllium Membranes

Brough D., Barrett L., Vanfleet R., Davis R., Liddiard S., Cornaby S., Coffin M., Brigham Young University, US

As micro and nanotechnology continue to advice into products, durability, reliability and robustness become important factors. One application where micro technology needs such qualities is X-ray windows. X-ray windows consist of free standing thin film [...]

Nanoscale deformation analysis for fracture mechanical evaluation of interface cracks in electronic packages

Keller J., Schulz M., Mrossko R., Wunderle B., Michel B., AMIC Angwandte Micro-Messtechnik GmbH, DE

The ongoing development of highly integrated electronic packages leads to a steadily increasing number of material interfaces within a package. In combination with increasing harshness (vibration, humidity, temperature) of the system environment the reliability of [...]

Reliability Prediction of Single-Crystal Silicon MEMS Using Dynamic Raman Spectroscopy

Dewanto R., Hu Z., Gallacher B., Hedley J., Newcastle University, UK

This paper proposes an extension and improvement to reliability predictions in single-crystal silicon MEMS by utilizing dynamic Raman spectroscopy to allow the gathering process of Weibull fracture test data to be done directly on devices [...]

Detecting Defects over the Whole Surface of Wafer by Non-destructive and Non-contact Pulse Photoconductivity Method (PPCM)

Ndagijimana J., Soh Y., Kubota H., Kobayashi K., Kumamoto University, JP

With the miniaturization of CMOS, the gate insulator has extremely become thin until reaching the EOT (equivalent oxide thickness) of less than 1nm in order to keep maintaining high-speed performances of devices and low electric [...]

Experimental analysis of the MEMS Capacitive accelerometer’s shock resistibility

Tao Y., Liu Y., Dong J., Tsinghua University, CN

The shock resistibility of MEMS device has been an urgent issue in the field of consumer electronics, automotive industry and special military applications. The paper analyses experimentally the shock resistibility of a typical MEMS capacitive [...]

Impact of Channel Length and Gate Width of a N-MOSFET Device on the Threshold Voltage and its Fluctuations in Presence of Random Channel Dopants and Random Interface Trap: A 3D Ensemble Monte Carlo Stud

Ashraf N., Joshi S., Vasileska D., ASU, US

Previously we have reported threshold voltage fluctuations caused by presence of random distribution of dopant ions in the channel region of a 45 nm n-MOSFET and random single interface trap positioned from source to drain [...]

Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)
Published: June 18, 2012
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 978-1-4665-6275-2