Papers:
Linking of Atomistic Modeling to Macroscopic Behavior for Front End Processes
In this work, we review efforts to make effective use of atomistic calculations for the advancement of VLSI process simulation. We focus on front-end processes such as defect mediated dopant diffusion which play a large [...]
Modeling and Simulation of Non-Linear Damage Growth During Ion Implants in Silicon
In this work, we presents a newly proposed and enhanced damage model for the accurate prediction of both as-implanted impurity and point defect profiles in Monte Carlo simulation of ion implantation in (100) crystalline silicon. [...]
Accurate Three-Dimensional Simulation of Damage Caused by Ion Implantation
We present a Monte-Carlo ion implantation simulation method that allows a very accurate prediction of implantation induced point defects, generation of amorphous areas, and impurity distributions. The implanted impurity profiles can be calculated as well [...]
Ab-Initio TCAD Models of Dopant Diffusion in Silicon
The rapid pace of the silicon microelectronics industry, and its need for physics-based TCAD models of dopant diffusion, is coinciding with the tremendous algorithmic and computational advances occurring within modern ab initio electronic structure methods. [...]
Ab-Initio Pseudopotential Calculations of Boron Diffusion in Silicon
First-principle calculations of formation and migration energies of dopant atoms and native defects in semiconductors are a very useful input to improve semiconductor process simulations One example of this is the widely accepted first-principles model [...]
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems
Published: April 19, 1999
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9666135-4-6