Chandrasekaran K., Zhu Z.M., Zhou X., Shangguan W., See G.H., Chiah S.B., Rustagi S.C., Singh N.
Nanyang Technological University, SG
Keywords: compact modeling, double-gate, Regional aproach
A compact model for the explicit surface potential equation of doped symmetric double-gate MOSFET from Poisson equation with regional approach is presented. It’s scalable for all doping and channel thicknesses and has been proved to agree numerical results very well.
Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 7, 2006
Pages: 792 - 795
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 0-9767985-8-1