Aarts A.C.T., van der Hout R., van Langevelde R., van der Hout R., van Langevelde R., Scholten A.J., Willemsen M.B., Klaassen D.B.M.
Philips Research Laboratories, NE
Keywords: compact modelling, high-voltage MOS, LDMOS, MOS Model 20, quasi-saturation
In this paper various modelling approaches for Laterally Double-Di used MOS (LDMOS) devices are discussed. Characterisation results for the new compact LDMOS model called MOS Model 20 are presented. Measurements of the dc-current, its conductances and the capacitances obtained from Y -parameters of an LDMOS device, show that MOS Model 20 provides accurate descriptions in all regimes of operation. For future developments, the inclusion of quasi-saturation in MOS Model 20 is demonstrated. Finally, the consequence of the lateral non-uniformity of the LDMOS device for compact modelling is discussed.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2005 Workshop on Compact Modeling
Published: May 8, 2005
Pages: 93 - 98
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: Nanoparticle Synthesis & Applications
ISBN: 0-9767985-3-0