An Effective Potential Method for Including Quantum Effects Into the Simulation of Ultra-Short and Ultra-Narrow Channel MOSFETs

Akis R., Milicic S., Ferry D.K., Vasileska D.
Arizone State University, US

Keywords: Monte Carlo simulation, quantization, SOI devices, ultra-small MOSFETs

Quantum effects are known to occur in the channel region of MOSFET devices, in which the carriers are confined in a triangular potential well at the semiconductor-oxide interface. Typically, these effects are quantified by a simultaneous solution of the S

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Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems
Published: March 19, 2001
Pages: 550 - 553
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9708275-0-4