Photonic Materials & Devices – Page 12

Effects of Random Work Function Fluctuations in Nanoszied Metal Grains on Electrical Characteristic of 16 nm High-/Metal Gate Bulk FinFETs

Cheng H-W, Chiu Y-Y, Lee Y-H, Li Y., National Chiao Tung University, TW

High-/metal gate (HKMG) is one of key technologies for sub-45-nm generations in nano-CMOS era [1-2]. However, using HKMG may introduce random work functions (WKs) on device’s metal gate due to various metal grain orientations [3-5]. [...]

Artificial Nanostructure Materials for Optical Power Control Devices

Ofir Y., Donval A., Cheskis D., Fisher T., Oron M., KiloLambda, IL

The design of artificial nanostructured materials for the use in non-linear devices and integrated photonic systems is very challenging as it involves the need to incorporate the nanoparticles, nanomaterials and quantum physics equations. Near-field interactions [...]

Comprehensive Study on Reflectance of Si3N4 Subwavelength Structures for Silicon Solar Cell Applications Using 3D Finite Element Analysis

Lu Z-L, National Chiao Tung University, TW

Solar cell is one of the most promising renewable energy technologies in order to relieve the impact of the climate change. In semiconductor based solar cells, electron-hole pairs are generated via absorption of impinging photons. [...]

Opening of a tunable bandgap in graphene via oxygen plasma treatment: A building block for graphene-based electronics

Nourbakhsh A., Cantoro M., Klekachev A., De Gendt S., Sels B., IMEC, BE

The results of experiments devoted to the modification of the pristine electronic properties of single-layer graphene by means of an oxygen plasma will be illustrated. Electrical characterization and photoluminescence measurements are carried out to investigate [...]

A Five Input Majority Gate in Quantum-Dot Cellular Automatta

Akeela R., Wagh M.D., Lehigh University, US

We present a five input majority gate (MAJ5) designed in the quantum-dot cellular automata (QCA) technology. Unlike previous designs, our design is planer, uses integral cell placement and allows inputs and outputs from the peripheral [...]

Hybrid CMOS/nanodevice circuits with tightly integrated memory and logic functionality

Strukov D.B., University of California at Santa Barbara, US

We propose dynamic CMOL FPGA circuits which have potentials to perform massively parallel high throughput computations and in particular suitable for pattern matching tasks. The main difference of the proposed circuits from previously suggested hybrid [...]

Analysis of Graphene, Molecular Wires and Inorganic Materials for Nanoelectronics and Low Power Integrated Circuits

Lyshevski S.E., Rochester Institute of Technology, US

This paper studies some emerging and prospective materials and possible solutions for envisioned nanoscaled microelectronic devices. To assess and evaluate the performance of envisioned scaled microelectronic devices, one applies quantum mechanics and other advanced methods. [...]

Electron Transition Between Weakly Coupled Concentric Quantum Rings

Filikhin I., Matinyan S.G., Nimmo J., Vlahovic B., North Carolina Central University, US

We investigate the electron wavefunction localization in double concnetric quantum rings when a magentic field is applied.

Nano Electronics & Photonics

Enhanced Photoluminescence Properties of Li/Al-doped YPO4:Eu phosphors

Yi S.S., Silla University, KR

we have prepared different concentrations of Li/Al-doped YPO4:Eu0.05 phosphors by solid state reaction method and the synthesized materials were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), excitation and emission measurements. The dependence of [...]