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HomeTopicsNanoelectronics

Topic: Nanoelectronics

Nano Scale Device Modeling

A Unified Mobility Model for Excimer Laser Annealed Complementary Thin Film Transistors Simulation

Lin H-Y, Li Y., Lin H-Y, Lee J.W., Chiu C-M, Sze S.M., Natl Nano Device Labs & Natl Chiao Tung Univ, TW
Excimer laser annealing technique has been proposed in the fabrication of low temperature polycrystalline silicon (LTPS) in the recent years, in particular for the applications to active-matrix liquid crystal display (AMLCD) [1]. In comparing with [...]

Gate Length Scaling Effects in ESD Protection Ultra-thin Body SOI Devices

Lee J.W., Li Y., Sze S.M., Natl Nano Device Labs & Natl Chiao Tung Univ, TW
In this paper we experimentaly explore the gate length scaling effects which related to the abrupt degation of electrostatic discharge (ESD) robustness for ultra-thin body silicon on insulator (SOI) devices and integrated circuits (ICs). It [...]

Spectral Analysis of Channel Noise in Nanoscale MOSFETS

Casinovi G., Georgia Institute of Technology, US
This paper describes an algorithm for numerical computation of the power spectral density (PSD) of channel noise in nanoscale MOSFETs. Noise generation phenomena inside the channel are modeled as random processes, represented by distributed sources [...]

An Electrothermal Solution of the Heat Equation for MMICs Based on the 2-D Fourier Series

Giorgio A., Perri A.G., Politecnico di Bari, IT
In this paper a 2-D Fourier transform-based analytical method for the thermal and electrical solution of multilayer structure electronic devices is proposed. In particular this paper presents an analytical procedure for the thermal and electrical [...]

Advanced Semiconductors

Numerical Analysis of Nano-imprinting Process Based on Continuum Hypothesis

Kim B.S., Kim H-C, Woo Y.S., Lee W.I., Oh S.I., Kim B.S., Kim H-C, School of Mechanical and Aerospace Engineering, Seoul National University., KR
Nano-imprint lithography (NIL) is a processing tech-nique capable of transferring nano-scale patterns onto a thin film of thermoplastics such as polymethyl methacrylate (PMMA). Feature sizes down to 10 nm have been demonstrated to be made [...]

Microscope Slide Electrode Chamber for Nanosecond, Megavolt-Per-Meter Biological Investigations

Sun Y., Vernier P.T., Behrend M., Marcu L., Gundersen M.A., University of Southern California, US
Nanosecond pulsed electric fields pass through the external membranes of biological cells (which have typical response times much greater than nanoseconds) and perturb fast-responding intracellular structures and processes. To enable real-time imaging and investigation of [...]

Inverse RIE Lag of Silicon Deep Etching

Chung C.K., Chiang H.N., National Cheng Kung University, TW
This paper reports for the first time that the phenomena and reaction mechanism of inverse reactive ion etching (RIE) lag occurs in the silicon deep RIE process without feature coalescence. This phenomenon is related to [...]

Process Factors in the Reduction of Output Conductance in Sub-micron CMOS

May N.C., Tan H.S., Kordesch A.V., SILTERRA (M) SDN BHD, MY
CMOS Analog circuits require transistors with low output conductance (gds) in order to achieve high gain. Submicron MOSFETs with halo implants and retrograde wells are designed to have high transconductance (gm) but often suffer from [...]

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