In this paper a 2-D Fourier transform-based analytical method for the thermal and electrical solution of multilayer structure electronic devices is proposed. In particular this paper presents an analytical procedure for the thermal and electrical solution for multilayer structure integrated devices. It addresses the solution to the 3-D steady-state heat equation with temperature-dependent thermal conductivity for a single electronic device or a given configuration of two or more devices. The proposed method takes into account the dependence of the thermal conductivity of all the layers on the temperature; the heat equation is coupled with the device current-voltage relation in order to give physical consistence to the experimental evidence that the temperature increase causes a degradation of the electrical performances and that the electrical power is not uniformly distributed. An example of application to a GaAs MESFET is shown and the numerical results of the simulation are discussed and compared with experimental data.
Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2
Published: March 7, 2004
Pages: 1 - 4
Industry sector: Sensors, MEMS, Electronics