Topic: Informatics, Modeling & Simulation
Thermodynamic Processes of Si-interstitial Clusters
Interstitial defects control the dopant diffusion in ion-implanted silicon by providing traps for and sources of mobile interstitials. A study of the energetics and structural properties of interstitial clusters1 elucidates their growth path: interstitial clusters [...]
Boron Diffusion and Activation in Silicon in the Presence of Other Species
Li H-J., Kohli P., Ganguly S., Kirichenko T.A., Zeitzoff P., Torres K., Banerjee S., Univ. of Texas Austin, US
Modeling and experimental investigation of B equilibrium diffusivity and its activation in Si in the presence of other species, including ab initio calculations, are presented here. The results suggest that incorporating other species along with [...]
Theoretical Investigations of Diffusion and Clustering in Semiconductors
Density functional theory studies of two systems have been conducted: mechanisms of self-diffusion in Ge and clustering of B in Si. In the case of self-diffusion of Ge, we find for the vacancy mechanism within [...]
Atomistic Modeling of Arsenic Diffusion and Activation
Understanding the diffusion and activation of arsenic is critical for the formation of low resistance ultra-shallow junctions as required for nanoscale MOS devices. In this work, we combine the results of ab-initio calculations with continuum [...]
Dynamics and Friction at Incommensurate Contacting Surfaces
Fasolino A., Consoli L., Knops H.J.F., Research Institute for Materials, Institute of Theoretical Physics, University of Nijmegen, NL
We study the mechanisms for dissipation of mechanical energy during the sliding of two bodies against each other, namely the origin of friction at an atomic scale. We consider the most likely case of incommensurate [...]
A Signal Processing Approach for the Analysis of Mechanism of Surface Generation in EDM
For a superior analysis of mechanism of erosion and surface generation in EDM, the surface profile is analysed using a signal analysis technique namely its autocorrelation function. The correlation length thus evaluated and the roughness [...]