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HomeTopicsInformatics, Modeling & Simulation

Topic: Informatics, Modeling & Simulation

A Physics-Based Empirical Model for Ge Self Diffusion in Silicon Germanium Alloys

Rabie M.A., Haddara Y.M., McMaster University, CA
We propose a physics-based model for the Ge diffusivity in SiGe and empirically fit the model to previously reported experimental results. The self-diffusivity of Ge can be given by: DGe=D0*exp(Sx)*exp(-E/kT) where x is the Ge [...]

Effect of Strain on the Oxidation Rate of Silicon Germanium Alloys

Rabie M.A., Gou S., Haddara Y.M., Knights A.P., Wojcik J., Mascher P., McMaster University, CA
We report on a series of experiments in which a strained Si0.95Ge0.05 layer 600Å thick was oxidized along with relaxed SiGe layers and Si samples. In this work, we observed that the oxidation rate of [...]

Modeling Germanium-Silicon Interdiffusion in Silicon Germanium/Silicon Super Lattice Structures

Hasanuzzaman M., Haddara Y.M., Knights A.P., McMaster University, CA
Intermixing at heterointerfaces and the broadening of the SiGe layer in SiGe/Si super-lattice (SL) structures can be detrimental to device performance. Thus it is important to develop predictive model for interdiffusion in SL structures. In [...]

Modeling Voids in Silicon

Hasanuzzaman M., Haddara Y.M., Knights A.P., McMaster University, CA
Voids in silicon are used for gettering transition metals and may be used to detect point defect injection. High energy implants can create a separation between vacancies and interstitials making a vacancy rich region near [...]

Design for Manufacturing integrated with EDA Tools

Triltsch U., Büttgenbach S., Technical University of Braunschweig, DE
In this paper we present a process planning and optimization tool which can be linked to commercially available EDA tools. The increasing variety of available fabrication technologies and materials for microtechnological devices make the design [...]

Finite Element Analysis of a MEMS-Based High G Inertial Shock Sensor

Wang Y.P., Hsu R-Q., Wu C.W., National Chiao Tung University, TW
Inertial sensors have been extensively utilized in science and industry. For high G (>300G) applications, reaction times for conventional mechanical type shock sensors are not fast enough. In some cases the shock sensor structures disintegrate(>5000G). [...]

Numerical Modeling of Microdrop Motion on Digital Microfluidic Multiplexer

Ahmadi A., Najjaran H., Holzman J., Hoorfar M., University of British Columbia, CA
This paper introduces a computationally efficient numerical modeling approach for microdroplet motion on an innovative Digital Microfluidic Multiplexer structure which enables the pilot synthesis and study of nanoparticles. This structure offers an enhanced level of [...]

Design and Simulations of a Microfluidic Pump with Multiple Vibrating Membranes

Koombua K., Pidaparti R.M., Longest P.W., Atkinson G.M., Virginia Commonwealth University, US
A novel design of a micropump with multiple vibrating membranes has been developed in this study. The micropump consists of three nozzle/diffuser elements with vibrating membranes, which are used to create pressure difference in the [...]

The IMPRINT software: quantitative prediction of process parameters for successful nanoimprint lithography

Kehagias N., Reboud V., Sotomayor Torres C.M., Sirotkin V., Svintsov A., Zaitsev S., IMT RAS, RU
A homogeneous residual layer thickness in nanoimprint lithography (NIL) can be achieved by optimizing the NIL stamp geometry (the distribution of cavities and protrusions, the stamp cavities depth and the stamp thickness) as well as [...]

Process Sensitivity Analysis of a 0.25-um NMOS Transistor Using Two-Dimensional Simulations

Keshavarz A.A., Laurent L.F., Leonardi P.C., STMicroelectronics, US
This work attempts to predict the sensitivity of the 0.25-um NMOS transistor characteristics and parameters to selected manufacturing process steps. The transistor is on the 0.25um line of production in STMicroelectronics. The methdology uses two-dimensional [...]

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