Advanced Materials & Manufacturing – Page 630

Three-dimensional, Full-band, Quantum Modeling of Electron and Hole Transport Through Si/SiGe Nano-structures

Rivas C., Lake R., University of California, US

Full-band, three-dimensional (3D), atomistic, non-equilibrium Green fuction simulations are used to model Si nanowires. Full-band and single band calculations are compared. The effect of surface passivation is analyzed in the full-band simulations. Our approach to [...]

Nano Electronics

Merging Atomistic and Continuum Simulations of Silicon Technology – The Best from the Two Worlds

Pichler P., Fraunhofer Institute for Integrated Circuits, DE

Simulation of diffusion processes during front-end silicon process stepes needs to address a variety of highly complicated phenomena. In industrial environments, such simulations are nearly entirely based on continuum approaches. The physics entering into the [...]

Study of Alloy Disorder in Quantum Dots through Multi-million Atom Simulations

Klimeck G., Oyafuso F., Boykin T.B., Bowen R.C., von Allmen P., NASA, Jet Propulsion Laboratory, US

A tight binding model which includes s, p, d and s* orbitals is used to examine the electronic structures of an ensemble of dome-shaped In0.6Ga0.4As quantum dots. Given ensembles of identically sized quantum dots, variations [...]

Practical Atomistic Dopant Diffusion Simulation of Shallow Junction Fabrication Processes and Intrinsic Fluctuations for sub-100nm MOSFETs

Hane M., Ezaki T., Ikezawa T., NEC Corporation, JP

We studied sophisticated shallow junction fabrication processes, i.e. spike-annealing and flash-lamp annealing, using our recently developed atomistic dopant diffusion simulator. Through its use of kinetic Monte Carlo procedure, considering all the possible charged species and [...]

Process Modeling Based on Atomistic Understanding for State of the Art CMOS Device Design

Chakravarthi S., Diebel M., Chidambaram P.R., Ekbote S., Dunham S.T., Machala C.F., Johnson S., Texas Instruments, US

Atomistic modeling methods are emerging as a powerful tool to understand the physical behavior of complex systems. However, continuum process simulators are the core of state of the art TCAD simulators and substantial challenges must [...]

Nano Scale Device Modeling

Information Coding for Intramolecular Integration of Logic Functionality

Ciontu F., Roman C., Courtois B., Tima Laboratory, FR

Although molecular electronics has a great potential, the feasibility of this technology will be however conditioned by the possibility of building complex circuits. But while on the technological versant rapid progresses have been accomplished during [...]

Application of Nano-carbon Cold Cathodes for Lighting Elements

Obraztsov A.N., Volkov A.P., Petrushenko Yu.V., Satanovskaya O.P., Moscow State University, RU

In our recent publications it was reported about intensive field emission (FE) of electrons from nano-carbon (nC) thin film material grown by non-catalytic CVD method. The low FE threshold (less than 1.5 V/mm), high density [...]

Variation of Contact Barrier Height in Metal-Semiconducting Carbon Nanotube Junctions using a Localized Gate

Gallo E., Nabet B., Freitag M., Johnson A.T., Drexel University, US

We have previously succeeded in modulating current in a carbon nanotube FET device due to the presence of a potential on an AFM tip. Symmetric I-V is observed with no tip, however, the tip has [...]