Advanced Materials & Manufacturing – Page 509

Research of Fault-Tolerant Computing Using COTS Elements

Swiercz B., Makowski D., Napieralski A., Technical University of Lodz, PL

The problem of designing hardened systems is very important for modern physics. The physics experiences design in linear accelerators and synchrotrons need measurements and control devices, which are under radiation impact. This paper highlights the [...]

FPGA-based Neutron Radiation Tolerant Microcontroller

Makowski D., Jablonski G., Grecki M., Mielczarek J., Napieralski A., Technical University of Lodz, PL

The paper presents a FPGA-based neutron radiation detector using radiation sensitive SRAM as a detector. Its main component is a PIC16C57-compatible microcontroller, described in VHDL. The system has been designed using hardware redundancy, Hamming error [...]

Three-Dimensional Simulation of Polysilicon Thin Film Transistors with Single-, Double-, and Surrounding-Gate Structures

Li Y., Lee B-S, National Chiao Tung University, TW

Thin-film-transistors (TFTs) with high mobility and low leakage current are desirable in many applications especially in liquid crystal display (LCD).We have computationally analyzed electrical properties of thin film transistors using three-dimensional (3D) simulation. It is [...]

Debunking an Urban Legend: Uniformity in Edge-Lit Frustrated TIR Displays

Selbrede M.G., Uni-Pixel Displays, Inc., US

Field sequential color display systems that utilize frustrated total internal reflection to activate pixels offer tremendous advantages over existing display technologies. Among these advantages are display transparency, imaging of infrared and visible light on the [...]

Thermal Noise and Bit Error Rate Limits in Nanoscale Memories

Forbes L., Mudrow M., Wanalertlak W., Oregon State University, US

Analysis of the effects of thermal noise in nanoscale memories is presented. A theoretical analysis of thermal noise is used to predict the number of bit errors per year caused by thermal noise.

Solar-Blind Dual-Band UV/IR Photodetectors Integrated on a Single Chip

Starikov D., Boney C., Pillai R., Bensaoula A., Integrated Micro Sensors Inc., US

Currently used flame detectors that are composed of discrete UV and IR solid-state components are bulky, sustain temperatures only below 125°C, and are not capable of detecting a multi-band optical signal with high spatial resolution. [...]

Phenyl–Terminated Self Assembled Monolayers on Si(100) for Low Voltage Transistor Applications

Sim A., Harper J., Zareie H., James M., Singh N.K., The University of New South Wales, AU

A key problem with the existing thin film organic field effect transistor is their large operating voltage (> 20 V) due to the relatively thick (>100 nm) dielectric layer (e.g. SiO2,) which restricts their in [...]

Electrical and Optical Nanosensors

Koeck A., Hainberger R., Heer R., Kast M., Maier T., Stepper C., ARC Seibersdorf Research GmbH, AT

Electrical and optical nanosensors for biomedical diagnostics and biochemical analytics are developed. The electrical and optical nanosensors employ nanobelt, nanowire and nanogap structures fabricated on silicon-on-insulator (SOI) wafers. In SOI wafers, a thin silicon layer [...]

Audio Signal Processing Using Mixed Hardware-Software Approach

Rominski A., Ciota Z., Napieralski A., Technical University of Lodz, PL

In this paper the possibilities of modern audio-processing systems have been described. One of the most important tasks is a proper definition of feature vectors. For example, the long-term spectra vector has been chosen as [...]

Novel FD SOI Devices Structure for Low Standby Power Applications

Ma M-W, Chao T-S., Kao K-S, Huang J-S, Lei T-F, National Chiao Tung University, TW

In this paper, fully depleted (FD) SOI devices with S/D extension shift and high-k offset spacer were investigated in detail. The results show that the S/D extension shift can decrease Ioff significantly to reduce standby [...]