After the discovery of photoluminescence of silicon (Si) nanocrystals embedded in silicon dioxide a big effort has been done to understand such emission. However, almost not application of these characteristics can be found until now. In this paper, an UV silicon radiation sensor is reported. This detector extends the silicon sensibility to 200 nm with good efficiency. A silicon detector that extends the silicon responsivity to start from 200 nm was fabricated using embedded silicon nanocrystals. The Responsivity in the region from 200 to 400 nm has been increased considerably.
Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 8, 2005
Pages: 313 - 315
Industry sector: Sensors, MEMS, Electronics
Topics: Photonic Materials & Devices