Enhancement of Silicon Photon Emission with Nanostructure Array

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Initiated by the high photon-emission nature of the porous silicon materials and the light transmission enhancement characteristics of the photonic crystals, the research of silicon Raman scattering of array nanostructures built by the electron beam lithography to improve the emission efficiency has been started. By combining these two special characteristics, the light emission rate limitation of the silicon from indirect band gap transition mechanism can be overcome and the equally spaced array structure can act as an optical antenna to enlarge the light emission intensity. Through the improvement in the light emission performance, there is a great potential for the silicon as an opto-electronic component, moreover, because of its compatibility and stability, in principle the silicon nanostructures can be readily integrated with microelectronic circuits.Through the experiment, we have found that the Raman enhancement of factor up to 4.2 can be achieved by our currently built structures. At the moment, a more detailed analysis work for this research is still carrying on and more experimental works are needed to be done to verify that a well fabricated tunable silicon nanostructure produced by EBLS techniques can be a much better and more versatile alternative for porous silicon materials.

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Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 8, 2005
Pages: 316 - 319
Industry sector: Sensors, MEMS, Electronics
Topic: Photonic Materials & Devices
ISBN: 0-9767985-2-2