Using ‘Adaptive Resurf’ Technique and Field Plate Working to Improve the Safe Operating Area of n-type Drain Extended MOS Transistors

Bakeroot B., Moens P., Vermandel M., Doutreloigne J.
University of Gent, BE

Keywords: adaptive resurf, field plate, MOS transistor, SOA, TCAD

Using TCAD, an n-type DEMOS (Drain Extended MOS) has been developed in a standard 0:35 mCMOS technology. The devices are optimised towards a Safe Operating Area (SOA) of 60 – 65 V using an n-type “adaptive resurf” implant under the field oxide. In this work, only two additional masks are added to the standard process flow (one ntub mask as well), rendering the implementation very cost-effective. In this paper it is shown that the optimal dose and layout of the adaptive resurf implant will strongly be determined by the SOA-breakdown voltage trade-off. Moreover,it is shown that the optimal dose is dependent on the size of the device, especially on the field plate length.

PDF of paper:

Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems
Published: March 19, 2001
Pages: 498 - 501
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9708275-0-4