Takemura Y., Osada K., Yagyu M., Yamaguchi K., Ushio J., Maruizumi T.
Hitachi Ltd., JP
Keywords: 3D effects, capacitance, Green's function method, Interconnect, SRAM
Employing Green’s function method, we analyzed the 3D capacitance for the hole interconnect structure in an SRAM cell. We found novel 3D effects as follows; (1) via connection increases the capacitance of parallel lines, (2) as the line length difference becomes large, the capacitance of parallel lines becomes much larger than that calculated from • S / d, (3) capacitance between vertical contact vias (CNTs) and horizontal gate is large although their heights are significantly different. We think our analysis method is useful in designing high-speed ULSIs.
Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems
Published: March 19, 2001
Pages: 394 - 397
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9708275-0-4