Janicki M., Zajac P., Szermer M., Napieralski A.
Lodz University of Technology, PL
Keywords: many core processors, technology scaling, thermal simulation, tri-gate transistors
This paper presents the analyses of static and dynamic thermal coupling among microsystem components for technologies based on tri-gate transistors. Simulations were carried out using Green’s function thermal solver based on power trace data computed from BSIM-CGM predictive technology models. The most important conlusion is that, unlike in the case of standard planar technologies, when scaling down the tri-gate devices the thermal coupling between particular modules might decrease what could be beneficial for performance improvement. The final version of the paper will validate simulation results with measurements of a thermal test ASIC.
Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2013: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)
Published: May 12, 2013
Pages: 520 - 523
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: Informatics, Modeling & Simulation
ISBN: 978-1-4822-0584-8