CBR technique has been used to perform fully quantum-mechanical simulation of 10nm FinFET devices with varying fin width. Device characteristics have been observed and compared to the experimental values. It is observed from the simulation results how two seperate channels merge into a single channel as fin width is reduced gradually from 12 nm towards 8 nm.Also different device characteristics like subthreshold slope and DIBL have been extracted and compared to the experimental values.
Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 1
Published: May 7, 2006
Pages: 54 - 57
Industry sector: Advanced Materials & Manufacturing