Brugger S.C., Wirthmueller A., Schenk A.
ETH Zürich, CH
Keywords: double gate MOSFET, Monte Carlo, quantum transport, silicon
In a previous work we proposed a one-particle Monte-Carlo method based on equations for the currents. Our method has the advantage of being able to take into account arbitrary generation-recombination processes self-consistently. Recently, we extended the method to include the quantum potential term in a self-consistent way and free of the problems encountered in other Monte-Carlo methods. Our method allows for any geometry (in contrast to the 1D-Schrödinger based method), quantization in all directions, tunneling, as well as the generation (as a by-product) of a model for the transport parameters in the simulated device, which can be used in usual Drift-Diffusion (DD) simulators.
Journal: TechConnect Briefs
Volume: 4, Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 4
Published: May 20, 2007
Pages: 555 - 558
Industry sector: Advanced Materials & Manufacturing
Topics: Advanced Manufacturing, Nanoelectronics
ISBN: 1-4200-6376-6