quasi-ballistic transport – TechConnect Briefs

Analytic Compact Model of Ballistic and Quasi-ballistic Cylindrical Gate-All-Around MOSFET Incorporating Drain-Induced Barrier Lowering Effect

Cheng H., Uno S., Nakazato K., graduate school of engineering, Nagoya University, JP

Gate-All-Around metal-oxide-semiconductor field effect transistors (GAA-MOSFETs) have been attracting ever-increasing attention. The numerical calculations including quantum mechanical effect and ballistic transport of drain current can be evaluated quite accurately. However, it takes an immense amount [...]

Analytical Modelling of Ballistic and Quasi-Ballistic Nanowires:Validation and Application to CMOS Architecture

Martinie S., Munteanu D., Le Carval G., Jaud M-A, Autran J-L, CEA/LETI/MINATEC, FR

We present here an unified analytic model for ballistic and quasi-ballistic Silicon Nanowire (SNW represented in figure 1). Starting from the classical flux method and using the Lundstrom/Natori approaches [1-2], we enhanced them by taking [...]

Performance study of Ballistic and Quasi-Ballistic on Double-Gate MOSFETs 6T SRAM cell

Martinie S., Jaud M-A, Munteanu D., Thomas O., Le Carval G., Autran J-L, CEA/LETI/MINATEC, FR

The impact of ballistic/quasi-ballistic carrier transport on the switch of a CMOS inverter and on the noise margin of a 6T SRAM cell, both based on Double-Gate MOSFETs (DGMOS), is analysed using mixed-mode simulation. To [...]