Martinie S., Jaud M-A, Munteanu D., Thomas O., Le Carval G., Autran J-L
CEA/LETI/MINATEC, FR
Keywords: ballistic transport, CMOS inverter, double gate MOSFETs, quasi-ballistic transport, SRAM
The impact of ballistic/quasi-ballistic carrier transport on the switch of a CMOS inverter and on the noise margin of a 6T SRAM cell, both based on Double-Gate MOSFETs (DGMOS), is analysed using mixed-mode simulation. To simulate ballistic and quasi-ballistic transport, we introduced the pioneering approach of quasi-ballistic mobility proposed by Rhew et al into a TCAD simulator. Finally, we demonstrate the direct relation between the nature of transport in the channel and the 6T SRAM cell static performances.
Journal: TechConnect Briefs
Volume: 3, Nanotechnology 2009: Biofuels, Renewable Energy, Coatings, Fluidics and Compact Modeling
Published: May 3, 2009
Pages: 359 - 362
Industry sector: Advanced Materials & Manufacturing
Topic: Informatics, Modeling & Simulation
ISBN: 978-1-4398-1784-1