Fu Y., He J., Liu F., Zhang L., Feng J., Ma C.
Peking University, CN
Keywords: compact modeling, device physics, nanoscale MOSFET with core-shell structure, non-classical MOSFETs
This paper investigates the transport properties of the silicon/Germanium nanowire MOSFETs with core-shell structure by a numerical method. Coupling Poisson’s equation to Schrödinger’s equation for electrostatics calculation, and electron structure to current transport equation for channel current computation, the electronic structure, quantized energy levels, relevant wave functions and charge distribution are solved self-consistently by a finite numerical method. Based on these findings, the transistor performances, including the capacitance characteristics and drain current, are further predicted.
Journal: TechConnect Briefs
Volume: 3, Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation – Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: June 1, 2008
Pages: 46 - 49
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: Photonic Materials & Devices
ISBN: 978-1-4200-8505-1