Scholten A.J., Tiemeijer L.F., van Langevelde R., Zegers-van Duijnhoven A.T.A., Havens R.J., Zegers-van Duijnhoven A.T.A., Venezia V.C., Klaassen D.
Philips Research Laboratories Eindhoven, NE
Keywords: avalanche noise, compact modeling, induced gate noise, MOSFET, noise, RF-CMOS, shot noise, thermal noise
The RF noise in 0.18um CMOS technology has been measured and modeled. Compared to long-channel theory we find only a moderate enhancement of the drain and current noise for short-channel MOSFETS and, due to the gate resistance, a more significant enhancement of the gate current noise. The experimental results are accurately describe by a non-quasi-static RF model, based on channel segmentation. Experimental evidence is shown for two additional noise mechanisms: (i) avalanche noise associated with the avalanche current from drain to bulk, and (ii)j shot noise in the direct-tunneling gate leakage current.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2005 Workshop on Compact Modeling
Published: May 8, 2005
Pages: 331 - 334
Industry sector: Sensors, MEMS, Electronics
Topic: WCM - Compact Modeling
ISBN: 0-9767985-3-0