Fossum J.G., Chouksey S.
University of Florida, US
Keywords: drain-induced charge enhancement, FinFET, velocity overshoot
Saturation-region effects, unique to double-gate (DG) MOSFETs, are discussed and modeled in UFDG. The effects include carrier velocity overshoot and drain-induced charge enhancement (DICE). The former, modeled in terms of carrier temperature, implies ballistic-like currents in nanoscale DG FinFETs. The latter, modeled in two dimensions with bulk inversion, increases drive current and, most significantly, gate capacitance, in nanoscale DG MOSFETs.
Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 20, 2007
Pages: 510 - 511
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 1-4200-6184-4