He J.
Peking University Shenzhen SoC Key Lab., CN
Keywords: modeling, nanometerT-FinFET, performane enhancement, process technology, strain effect
It is an often measure that the process-induced stress has been used in advanced CMOS process platform to increase the carrier mobility so to enhance MOSFET performance. It has also a strong effect on the mobility of T-FinFET once the kind of device is fabricated in the CMOS process platform as done always in experiment tunneling FET device. Here we report the proess-induced stress mobility enhance effect and developed a compact model for it, the layout dependence of the T-FinFET mobility due to process-induced stress is efficiently captured. The mobility model is verified for different layout dimensions for several stress-inducing process technologies through both process simulations and experimental data.
Journal: TechConnect Briefs
Volume: 1, Advanced Materials: TechConnect Briefs 2017
Published: May 14, 2017
Pages: 375 - 378
Industry sector: Advanced Materials & Manufacturing
Topics: Advanced Manufacturing, Nanoelectronics
ISBN: 978-0-9975117-8-9