Linking of Atomistic Modeling to Macroscopic Behavior for Front End Processes

Dunham S.T.
Boston University, US

Keywords: diffusion, extended defects, lattice Monte Carlo, point defects, transient enhanced diffusion

In this work, we review efforts to make effective use of atomistic calculations for the advancement of VLSI process simulation. We focus on front-end processes such as defect mediated dopant diffusion which play a large role in determining device behavior.

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Journal: TechConnect Briefs
Volume: Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems
Published: April 19, 1999
Pages: 355 - 358
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9666135-4-6