Investigation of Metal Nano Layer Formation by the Tunneling Current through the Thin Oxide Film in the Electrolyte–Oxide–Silicon System

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In the researches on Electrolyte–Oxide–Silicon (EOS) system, tunneling current through the gate insulator has been considered as an undesirable factor causing reliability issues such as gate insulator degradation and interface state generation. In this work, we suggest a new technique to make EMOS with metal nano layer utilizing tunneling current of EOS system and metal layer is confirmed by AFM image as shown in Fig. 5. As the voltage sweep cycle applies repeatedly, we could obtain stable electronic characteristics in contrast with those of the raw EOS system by controlling H+ density in the oxide. Since the proposed technique can selectively deposit thin metal layer on active sites, it can be easily used for the bio- or photo-sensor applications.

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Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)
Published: June 18, 2012
Pages: 494 - 497
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Advanced Manufacturing, Nanoelectronics
ISBN: 978-1-4665-6275-2