Profirescu M.D., Dima G., Govoreanu B., Mitrea O.
University Politehnica of Bucharest, RO
Keywords: design of experiments (DOE), HEMT, optimization, response surface model (RSM)
In this paper, the optimization of heterostructure devices using the Design of Experiments concept and advanced Response Surface Models is presented. As an example, the structural optimization of a pseudomorphic Al0.2Ga0.8As/In0.2Ga0.8As/GaAs pulse doped HEMT is discussed.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems
Published: April 19, 1999
Pages: 214 - 217
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9666135-4-6