Chen P.S., Chen Y.J., Peng Y.H., Chen P.S., Chen Y.J., Kuan C.H.
National Taiwan University, TW
Keywords: CVD, e-beam, germanium dots, nano
Here we report the ability to fabricate well-aligned and mono-modal Ge dots on the silicon substrate with nano-trenches. It is started with electron beam lithography system (E-beam) to make patterns. Then reactive ion etching (RIE) is used to fabricate silicon trenches. At last, Ge dots are grown by ultra-high-vacuum chemical vapor deposition (UHV-CVD). In our experiments, it is observed that well-aligned and mono-modal Ge dots are only grown on the ridges. A model is also set up to explain the growth of Ge dots on the silicon substrate with nano-structures. Manipulation of nano-structures allows us to grow Ge dots at the predetermined position. It offers the potential applications of Ge-dots array for the implementation of nano-devices.
Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 2
Published: May 8, 2005
Pages: 497 - 500
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: MEMS & NEMS Devices, Modeling & Applications
ISBN: 0-9767985-1-4