Singh A., Grycznski K.G., Rout B., Li J., McDaniel F., Neogi A., Sahu G., Mahapatra D.P.
University of North Texas, US
Keywords: Fluorescence, silicon photonics, UV emission
UV light emission comparable to GaN based semiconductor is observed from gold-implanted Si (100) semiconductors. A low energy Au implant forming the Si nanoparticles or quantum dots are been irradiated and recrystallized by a MeV range Au-Ion beam. Si quantum dots are formed which shows exciton transitions at low temperature. These Si quantum dots emit with a peak emission of ~ 3.27 eV at 300 K, which is shifted to about 3.37 eV at 77 K. Time resolved photoluminescence measurements from Si nanoparticles reveal ns-ps decay features exhibiting strong radiative recombination process. These decay features are significantly faster than conventional amorphous or poly-Si nanocrystals which are dominated by Auger recombination process in the micro-second range. This role of surface-plasmon polariton induced enhancement in the PL emission process is also discussed
Journal: TechConnect Briefs
Volume: 1, Nanotechnology 2009: Fabrication, Particles, Characterization, MEMS, Electronics and Photonics
Published: May 3, 2009
Pages: 570 - 573
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Nanoelectronics, Photonic Materials & Devices
ISBN: 978-1-4398-1782-7