Yang F.
University of Rochester, US
Keywords: electric field, MEMS, one-dimensional diffusion, stresses, wafers
The diffusion-induced stresses in silicon wafers were studied. The effect of local electric field on dopant diffusion was considered in the diffusion equation. Only one-dimension problem with a constant surface dopant concentration was investigated. The closed form solutions of stresses and expansion of the wafer arising from dopant diffusion are obtained on the basis of linear elastic theory. The results show that the wafer surface is always under compression, while at the wafer center the stress is tensile. The maximum compressive stress is at the surface of the wafer at the initial time, which is independent of the local electric field. The stress at the wafer surface decreases with time. It increases with local electric field and gradually approach to zero with time.
Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems
Published: March 19, 2001
Pages: 430 - 433
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9708275-0-4