Copper Displacement Deposition on Nanostructured Porous Silicon

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In the present work we have demonstrated nanosized structures fabrication by the copper displacement deposition on electrochemically etched porous silicon. Peculiarity of such method is the convergence of copper reduction with porous silicon dissolution. Principal innovation we have proposed is hydrofluoric acid addition into copper cations containing solution. It has provided SiO2 removing that significantly expends the collection of nanoscaled structures obtained by the mentioned technique. The aim of the present work was to obtain electrical features and specific resistance of the copper/porous silicon nanostructures to check their ability to be applied as contacts with required characteristics. It has been found variation of the porous silicon preparation regimes allows creating both the rectifying and the ohmic copper/porous silicon nanocomposite contacts. Furthermore we have revealed crystallographic orientation of the initial silicon and porous silicon porosity strongly effect on nanocomposite resistance. In addition we have been successful to produce copper porous membranes by long free porous silicon films immersion in solution for copper deposition. The potential application fields of the obtained nanostructures are the subject of speculation of our work.

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Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Published: June 13, 2011
Pages: 269 - 272
Industry sector: Advanced Materials & Manufacturing
Topics: Advanced Manufacturing, Nanoelectronics
ISBN: 978-1-4398-7139-3