Han M-H, Li Y.
National Chiao Tung University, TW
Keywords: emerging device technology, intrinsic parameter fluctuation, modeling, nanoscale MOSFET, simulation
In this work, the intrinsic device parameter variability including the metal gate workfunction fluctuation (WKF), the process variation effect (PVE), and the random dopant fluctuation (RDF) in 16-nm-gate n-type MOSFETs (NMOS) and p-type MOSFETs (PMOS) are comprehensively studied. The results of this study show that RDF dominates the NMOS device characteristics, and WKF is major factor in PMOS. PVE affect the CMOS device AC characteristics, especially at high gate bias.
Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Published: June 21, 2010
Pages: 21 - 24
Industry sector: Sensors, MEMS, Electronics
Topic: Nanoelectronics
ISBN: 978-1-4398-3402-2