Comparative Analysis of Threshold Voltage Variations in Presence of Random Channel Dopants and a Single Random Interface Trap for 45 nm N-MOSFET as Predicted by Ensemble Monte Carlo Simulation and Existing Analytical Model Expressions

Ashraf N.; Vasileska D.

Comparative Analysis of Threshold Voltage Variations in Presence of Random Channel Dopants and a Single Random Interface Trap for 45 nm N-MOSFET as Predicted by Ensemble Monte Carlo Simulation and Existing Analytical Model Expressions

Ashraf N., Vasileska D.
Arizona State University, US

Keywords: random traps, reliability, threshold voltage

Comparative analysis of analytical model and full Ensemble Monte Carlo simulation which takes into account both the short-range and the long-range coulomb interaction in the presence of random dopants and random traps is performed.

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Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Published: June 13, 2011
Pages: 145 - 148
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 978-1-4398-7139-3