Chen J., Liou J.J.
University of Central Florida, US
Keywords: inductors, q factors, RF
Recent growth in RF applications has increased the use of spiral inductors and thus demanded a more accurate model for such devices. In this paper, we develop a compact model for spiral inductors with symmetrical and asymmetrical terminals. Relevant and important physics such as the current crowding in metal line, coupling capacitance, frequency-dependent permittivity in oxide, and overlap parasitics are accounted for. Experimental data and results calculated from the existing inductor models are included in support of the model development.
Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 7, 2006
Pages: 724 - 728
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 0-9767985-8-1