Galup-Montoro C., Schneider M.C., Cunha A.I.A.
Universidade Federal da Bahia - UFBA, BR
Keywords: double gate MOSFET, intrinsic channel, threshold voltage, Undoped MOSFET
The purpose of this paper is to extend a charge-based definition of threshold voltage, already applied to conventional bulk MOSFETs to undoped single gate and symmetric double gate MOSFETs. The threshold surface potential is determined as the value for which the mobile charge density is equal to the thermal charge density. The threshold voltage evaluated according to this definition is compared to the threshold voltage determined through the second derivative method.
Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 20, 2007
Pages: 633 - 636
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 1-4200-6184-4